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A28F200BX-B

Features: x8/x16 Input/Output ArchitectureA28F200BX-T, A28F200BX-BFor High Performance and HighIntegration 16-bit and 32-bit CPUsOptimized High Density BlockedArchitectureOne 16 KB Protected Boot BlockTwo 8 KB Parameter BlocksOne 96 KB Main BlockOne 128 KB Main BlockTop or Bottom Boot LocationsExt...

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SeekIC No. : 004260036 Detail

A28F200BX-B: Features: x8/x16 Input/Output ArchitectureA28F200BX-T, A28F200BX-BFor High Performance and HighIntegration 16-bit and 32-bit CPUsOptimized High Density BlockedArchitectureOne 16 KB Protected Boot Bl...

A28F200BX-B Data Sheet

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Part Number:
A28F200BX-B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

x8/x16 Input/Output Architecture
 A28F200BX-T, A28F200BX-B
 For High Performance and High
Integration 16-bit and 32-bit CPUs
Optimized High Density Blocked
Architecture
 One 16 KB Protected Boot Block
 Two 8 KB Parameter Blocks
 One 96 KB Main Block
 One 128 KB Main Block
 Top or Bottom Boot Locations
Extended Cycling Capability
 1,000 Block Erase Cycles
Automated Word/Byte Write and
Block Erase
 Command User Interface
 Status Register
 Erase Suspend Capability
Y SRAM-Compatible Write Interface
Y Automatic Power Savings Feature
Ð1 mA Typical ICC Active Current in
Static Operation
Y Hardware Data Protection Feature
ÐErase/Write Lockout during Power
Transitions
Y Very High-Performance Read
Ð90 ns Maximum Access Time
Ð45 ns Maximum Output Enable Time
Y Low Power Consumption
Ð25 mA Typical Active Read Current
Y Deep Power-Down/Reset Input
ÐActs as Reset for Boot Operations
Y Automotive Temperature Operation
Ð b40§Cto a125§C
Y Write Protection for Boot Block
Y Industry Standard Surface Mount
Packaging
ÐJEDEC ROM Compatible
44-Lead PSOP
Y 12V Word/Byte Write and Block Erase
ÐVPP e 12V g5% Standard
Y ETOXTM III Flash Technology
Ð5V Read
Y Independent Software Vendor Support


Specifications

Automatic Operating Temperature
During Read                                       - 40  to + 125 
During Block Erase
and Word/Byte Write                          -  40 to +  125 
Temperature Under Bias                      - 40 to +  125 
Storage Temperature                          - 65 to a+ 150 
Voltage on Any Pin
(except VCC,A9,VPP and RPÝ)
with Respect to GND                            - 2.0V to a7.0V(2)
Voltage on Pin RPÝ or Pin A9
with Respect to GND                       - 2.0V to a13.5V(2, 3)
VPP Program Voltage with Respect
to GND during Block Erase
and Word/Byte Write                      - 2.0V to a14.0V(2, 3)
VCC Supply Voltage
with Respect to GND                             - 2.0V to a7.0V(2)
Output Short Circuit Current                             100 mA(4)


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