Purchase A63P06361, In-stock A63P06361 From SeekIC.


Part Number: A63P06361
Description: The A63P06361 is a high-speed SRAM containing 36M bits of bit synchronous memory, organized as 1024K w...


Description: The A63P06361 is a high-speed SRAM containing 36M bits of bit synchronous memory, organized as 1024K w...
The A63P06361 is a high-speed SRAM containing 36M bits of bit synchronous memory, organized as 1024K words by 36 bits.
The A63P06361 combines advanced synchronous peripheral circuitry, 2-bit burst control, input registers, output buffer and a 1M X 36 SRAM core to provide a wide range of data RAM applications.
The positive edge triggered single clock input (CLK) controls all synchronous inputs passing through the registers. Synchronous inputs include all addresses (A0 - A16), all data inputs (I/O1 - I/O36), active LOW chip enable ( CE ), two additional chip enables (CE2, CE2 ), burst control inputs ( ADSC , ADSP , ADV ), byte write enables ( BWE , BW1 , BW2 , BW3 , BW4 ) and Global Write (GW ). Asynchronous inputs include output enable ( OE ), clock (CLK), BURST mode (MODE) and SLEEP mode (ZZ).
Burst operations can be initiated with either the address status processor ( ADSP ) or address status controller ( ADSC ) input pin. Subsequent burst sequence burst addresses can be internally generated by the A63P7336 and controlled by the burst advance ( ADV ) pin. Write cycles are internally self-timed and synchronous with the rising edge of the clock (CLK).
This feature simplifies the write interface. Individual Byte enables allow individual bytes to be written. BW1 controls I/O1 - I/O9, BW2 controls I/O10 - I/O18, BW3 controls I/O19 - I/O27, and BW4 controls I/O28 - I/O36, all on the condition thatBWE is LOW. GW LOW causes all bytes to be written.
A63P06361
PDF/DataSheet Download








