AA028P1-00

   Alpha's two-stage balanced Ka band GaAs MMIC power amplifier has a typical P_{1 dB} of 22 dBm with   12.5 dB associated gain and 10% power added efficiency at 28 GHz.The chip uses Alpha's proven 0.25m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.

   The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.All chips are creened for S-parameters and power characteristics prior o shipment for guaranteed performance.A broad range  applications exist in both the commercial and high eliability areas where high power and gain are required.