AA035P3-00

  Alpha's three-stage reactively-matched Ka band GaA MMIC driver amplifier AA035P3-00 has a typical P_{1 dB} of 17 dBm with 18 dB associated gain at 35 GHz.The chip uses Alpha's proven 0.25 m MESFET technology, which is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.

  The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate solder or epoxy die attachprocesses.The amplifier is a self-bias design requiring a single positive drain bias to one of any three bonding sites. All chips are screened for S-parameters prior to shipment for guaranteed performance.A broad range of applications exist in both the high reliability and commercial areas where high gain and power are required.