ACTS00D

Features: • 1.25 Micron Radiation Hardened SOS CMOS• Total Dose 300K RAD (Si)• Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ)• SEU LET Threshold >80 MEV-cm2/mg• Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse• Latch-Up Free Under Any Con...

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ACTS00D Picture
SeekIC No. : 004268101 Detail

ACTS00D: Features: • 1.25 Micron Radiation Hardened SOS CMOS• Total Dose 300K RAD (Si)• Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ)• SEU LET Threshold >80 ...

floor Price/Ceiling Price

Part Number:
ACTS00D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• 1.25 Micron Radiation Hardened SOS CMOS
• Total Dose 300K RAD (Si)
• Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ)
• SEU LET Threshold >80 MEV-cm2/mg
• Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55 to +125
• Significant Power Reduction Compared to ALSTTL Logic
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 0.8V Max
- VIH = VCC/2V Min
• Input Current 1µA at VOL, VOH



Pinout

  Connection Diagram


Specifications

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +6.0V
Input Voltage Range, All Inputs  . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input  . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±50mA
Storage Temperature Range (TSTG) . . . . . . . . . . . -65 to +150
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +265
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All Voltages Reference to VSS)
Thermal Impedance JA JC
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74/W 24/W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . 116/W 30/W
Maximum Package Power Dissipation at +125
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W
Maximum Device Power Dissipation. . . . . . . . . . . . . . . . . . .(TBD)W
Gate Count  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Gates
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.




Description

The Intersil ACTS00MS is a radiation hardened quad 2-Input NAND gate. A high logic level on both inputs forces the output to a logic low state.

The ACTS00MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radia- tion hardened, high-speed, CMOS/SOS Logic Family.




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