ACTSF128K16 Maximum Ratings
ACTSF128K16 Features
2 128K x 8 SRAMs & 2 128K x 8 Flash Die in One MCM
Access Times of 25ns (SRAM) and 60ns (Flash) or 35ns (SRAM) and 70 or 90ns (Flash)
128K x 16 SRAM
128K x 16 5V Flash
Organized as 128K x 16 of SRAM and 128K x 16 of Flash Memory with Separate Data Buses
Both Blocks of Memory are User Configurable as 256K x 8
Low Power CMOS
Input and Output TTL Compatible Design
MIL-PRF-38534 Compliant MCMs Available
Decoupling Capacitors and Multiple Grounds for Low Noise
Industrial and Military Temperature Ranges
Industry Standard Pinouts
Packaging Hermetic Ceramic
66 Pin, 1.08" x 1.08" x .160" PGA Type, No Shoulder, Aeroflex code# "P3"
66 Pin, 1.08" x 1.08" x .185" PGA Type, With Shoulder, Aeroflex code# "P7"
68 Lead, .94" x .94" x .140" Single-Cavity Small Outline Gull Wing, Aeroflex code# "F18" (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint)
DESC SMD Pending 5962-96900
FLASH MEMORY FEATURES
Sector Architecture (Each Die)
8 Equal Sectors of 16K bytes each
Any combination of sectors can be erased with one command sequence.
+5V Programing, 5V ±10% Supply
Embedded Erase and Program Algorithms
Hardware and Software Write Protection
Internal Program Control Time.
10,000 Erase/Program Cycles
Note: Programming information available upon request
ACTSF128K16 Connection Diagram
Map list: ABCDEFGHIJKLMNOPQRSTUVWXYZ 0123456789All