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Part Number: AD8009JRTZ

 

 

 

 

Description: The AD8009JRTZ is one member of the AD8009 series.The AD8009 is an ultrahigh speed current feedback am...


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AD8009JRTZ General Description


The AD8009JRTZ is one member of the AD8009 series.The AD8009 is an ultrahigh speed current feedback amplifier with a phenomenal 5,500 V/s slew rate that results in a rise time of 545 ps, making it ideal as a pulse amplifier.The high slew rate reduces the effect of slew rate limiting and results in the large signal bandwidth of 440 MHz required for high resolution video graphic systems.

Features of the AD8009JRTZ are:(1)175 mA output load drive;(2)10 dBm with38 dBc SFDR @ 70 MHz, G = +10;(3)14 mA (Typ) supply current;(4)ultrahigh speed;(5)large signal bandwidth;(6)small signal bandwidth (3 dB);(7)low distortion over wide bandwidth.While the AD8009 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (+150) is not exceeded under all conditions.To ensure proper operation, it is necessary to observe the maximum power derating curves.

The absolute maximum ratings of the AD8009JRTZ can be summarized as:(1)supply voltage:12.6 V;(2)internal power dissipation:0.75W;(3)input voltage (common mode):±VS;(4)storage temperature range:-65 to +125;(5)operating temperature range:-40 to +85;(6)lead temperature:300.Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.The maximum power that can be safely dissipated by the AD8009 is limited by the associated rise in junction temperature.The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately +150. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package.Exceeding a junction temperature of +175 for an extended period can result in device failure.

AD8009JRTZ datasheet

AD8009JRTZ-REEL
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