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MFG:ADI  D/C:09  

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Part Number: ADG636

 

MFG: ADI

 

D/C: 09

Description: The ADG636 is a monolithic device, comprising two independently selectable CMOS SPDT (Single Pole, Dou...


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ADG636 General Description


The ADG636 is a monolithic device, comprising two independently selectable CMOS SPDT (Single Pole, Double Throw) switches. When on, each switch conducts equally well in both directions.

The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V. 
This witch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. It offers on-resistance of 85 typ, which is matched to within 2 between channels. The ADG636 also has low power dissipation yet gives high switching speeds.

The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.

ADG636 Features

1 pC Charge Injection
±2.7 V to 5.5 V Dual Supply
+2.7 V to +5.5 V Single Supply
Automotive Temperature Range: 40 to +125
100 pA (Max @ 25C) Leakage Currents
85  Typ On Resistance
Rail-to-Rail Operation
Fast Switching Times
Typical Power Consumption (<0.1 W)
TTL/CMOS Compatible Inputs
14-Lead TSSOP Package

ADG636 Typical Application

Automatic Test Equipment
Data Acquisition Systems
Battery-Powered Instruments
Communication Systems
Sample-and-Hold Systems
Remote Powered Equipment
Audio and Video Signal Routing
Relay Replacement
Avionics

ADG636 datasheet

ADG636
PDF/DataSheet Download

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