Features: 1 pC Charge Injection±2.7 V to 5.5 V Dual Supply+2.7 V to +5.5 V Single SupplyAutomotive Temperature Range: 40 to +125 100 pA (Max @ 25C) Leakage Currents85 Typ On ResistanceRail-to-Rail OperationFast Switching TimesTypical Power Consumption (<0.1 W)TTL/CMOS Compatible Inputs14-Le...
ADG636: Features: 1 pC Charge Injection±2.7 V to 5.5 V Dual Supply+2.7 V to +5.5 V Single SupplyAutomotive Temperature Range: 40 to +125 100 pA (Max @ 25C) Leakage Currents85 Typ On ResistanceRail-to-Rai...
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The ADG636 is a monolithic device, comprising two independently selectable CMOS SPDT (Single Pole, Double Throw) switches. When on, each switch conducts equally well in both directions.
The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V. This witch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. It offers on-resistance of 85 typ, which is matched to within 2 between channels. The ADG636 also has low power dissipation yet gives high switching speeds.
The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.