ADG636

Features: 1 pC Charge Injection±2.7 V to 5.5 V Dual Supply+2.7 V to +5.5 V Single SupplyAutomotive Temperature Range: 40 to +125 100 pA (Max @ 25C) Leakage Currents85 Typ On ResistanceRail-to-Rail OperationFast Switching TimesTypical Power Consumption (<0.1 W)TTL/CMOS Compatible Inputs14-Le...

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SeekIC No. : 004275105 Detail

ADG636: Features: 1 pC Charge Injection±2.7 V to 5.5 V Dual Supply+2.7 V to +5.5 V Single SupplyAutomotive Temperature Range: 40 to +125 100 pA (Max @ 25C) Leakage Currents85 Typ On ResistanceRail-to-Rai...

floor Price/Ceiling Price

Part Number:
ADG636
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

1 pC Charge Injection
±2.7 V to 5.5 V Dual Supply
+2.7 V to +5.5 V Single Supply
Automotive Temperature Range: 40 to +125
100 pA (Max @ 25C) Leakage Currents
85  Typ On Resistance
Rail-to-Rail Operation
Fast Switching Times
Typical Power Consumption (<0.1 W)
TTL/CMOS Compatible Inputs
14-Lead TSSOP Package



Application

Automatic Test Equipment
Data Acquisition Systems
Battery-Powered Instruments
Communication Systems
Sample-and-Hold Systems
Remote Powered Equipment
Audio and Video Signal Routing
Relay Replacement
Avionics




Description

The ADG636 is a monolithic device, comprising two independently selectable CMOS SPDT (Single Pole, Double Throw) switches. When on, each switch conducts equally well in both directions.

The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V.  This witch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. It offers on-resistance of 85 typ, which is matched to within 2 between channels. The ADG636 also has low power dissipation yet gives high switching speeds.

The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.




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