ADG884BRMZ-REE17

The ADG884BRMZ-REE17 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.4 over the full temperature range, making the part an ideal solution for applications that require minimal distortion through the switch.

The features of ADG884BRMZ-REE17 can be summarized as:(1)1.8 V to 5.5 V operation ; (2)Ultralow on resistance:0.34 typ,0.38 max at 5 V supply ; (3)Excellent audio performance, ultralow distortion:0.1 typ,0.15 max RON flatness ; (4)High current carrying capability:400 mA continuous,600 mA peak current at 5 V supply ; (5)Rail-to-rail switching operation; (6)Typical power consumption (<0.1 W).

The absolute maximum ratings of ADG884BRMZ-REE17 can be summarized as:(1)VDD to GND:-0.3 V to +6 V ; (2)Analog Inputs:-0.3 V to VDD + 0.3 V ; (3)Digital Inputs:-0.3 V to 6 V or 10 mA (whichever occurs first) ; (4)Peak Current, S or D 5 V Operation:600 mA (pulsed at 1 ms, 10%duty cycle max) ; (5)Continuous Current, S or D,5 V Operation:400 mA ; (6)Operating Temperature RangeIndustrial(B Version):-40°C to +85°C; (7)Storage Temperature Range:-65°C to +150°C ; (8)Junction Temperature:150°C ; (9)IR Reflow, Peak Temperature <20 s:235°C.

If you want to know more information such as the electrical characteristics about the ADG884BRMZ-REE17, please download the datasheet in www.seekic.com or www.chinaicmart.com .