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ADS4616A4A

Features: •Single 3.3V +/- 0.3V power supply•MRS Cycle with address key programs-CAS Latency (2 & 3)-Burst Length (1,2,4,8, & full page)-Burst Type (sequential & Interleave)•2 banks operation•All inputs are sampled at the positive edge of the system clock•...

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SeekIC No. : 004277123 Detail

ADS4616A4A: Features: •Single 3.3V +/- 0.3V power supply•MRS Cycle with address key programs-CAS Latency (2 & 3)-Burst Length (1,2,4,8, & full page)-Burst Type (sequential & Interleave)&...

ADS4616A4A Data Sheet

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Part Number:
ADS4616A4A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/11

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Product Details

Description



Features:

•Single 3.3V +/- 0.3V power supply
•MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,4,8, & full page)
-Burst Type (sequential & Interleave)
•2 banks operation
•All inputs are sampled at the positive edge of the system clock
•Burst Read single write operation
•Auto & Self refresh
•4096 refresh cycle
•DQM for masking
•Package:50-pins 400 mil TSOP-Type II


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -0.3~ 4.6 V
Voltage on VDD supply relative to Vss VDD, VDDQ -0.3~ 4.6 V
Storage temperature TSTG -55 ~ +150
Power dissipation PD 1 W
Short circuit current IOS 50 mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
           Functional operation should be restricted to recommended operating condition.
           Exposure to higher than recommended voltage for extended periods of time could affect device reliability.


Description

The ADS4616A4A are two-bank Synchronous DRAMs organized as 524,288 words x 16 bits x 2 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications




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