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Part Number: ADS4616A4A
Description: The ADS4616A4A are two-bank Synchronous DRAMs organized as 524,288 words x 16 bits x 2 banks, Synchron...


Description: The ADS4616A4A are two-bank Synchronous DRAMs organized as 524,288 words x 16 bits x 2 banks, Synchron...
The ADS4616A4A are two-bank Synchronous DRAMs organized as 524,288 words x 16 bits x 2 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications
| Parameter | Symbol | Value | Unit |
| Voltage on any pin relative to Vss | VIN, VOUT | -0.3~ 4.6 | V |
| Voltage on VDD supply relative to Vss | VDD, VDDQ | -0.3~ 4.6 | V |
| Storage temperature | TSTG | -55 ~ +150 | |
| Power dissipation | PD | 1 | W |
| Short circuit current | IOS | 50 | mA |
ADS4616A4A-5
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