Features: · Lower On-Resistance· Simple Drive Requirement· Fast Switching Performance· Pb Free Plating ProductPinoutSpecifications Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±20 ±20 ID Continuous Dr...
AF8510C: Features: · Lower On-Resistance· Simple Drive Requirement· Fast Switching Performance· Pb Free Plating ProductPinoutSpecifications Symbol Parameter N-Channel P-Channel Units VDS D...
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Symbol | Parameter |
N-Channel |
P-Channel |
Units | |
VDS | Drain-Source Voltage |
30 |
-30 |
V | |
VGS | Gate-Source Voltage |
±20 |
±20 | ||
ID | Continuous Drain Current (Note 1) | TA=25 |
6.9 |
-5.3 |
V |
TA=70 |
5.0 |
-4.2 | |||
IDM | Pulsed Drain Current (Note 2) |
30 |
-30 |
A | |
PD | Total Power Dissipation | TA=2 |
2.0 |
W | |
Linear Deratomg Factor |
0.016 |
W/ | |||
TJ,TSTG | Operating Junction Temperature Range |
-55 to 150 |
The AF8510C advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applicat ions such as DC/DC converters.