AFM04P2-000 Selling Leads, Price trend, AFM04P2-000 DataSheet download, circuit diagram from SeekIC.com

Features: `21 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Efficiency, 25%`Broadband Operation, DC40 GHz`0.25 µm Ti/Pd/Au Gates`Passivated Surface`Through-Substrate Via Hole GroundingSpecifications Characteristic Value Drain to Source Voltage (VDS...

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SeekIC No. : 004278544 Detail

AFM04P2-000: Features: `21 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Efficiency, 25%`Broadband Operation, DC40 GHz`0.25 µm Ti/Pd/Au Gates`Passivated Surface`Through-Sub...

AFM04P2-000 Data Sheet

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Part Number:: AFM04P2-000
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/4/26

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AFM04P3-000 evaluate
Features: `21 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Effic...
AFM04P3-212 evaluate
Features: `Low Noise Figure, 0.6 dB @ 4 GHz`20 dBm Output Power @ 18 GHz`High Associated Gain, 13 ...
AFM04P3-213 evaluate
Features: `Low Noise Figure, 0.6 dB @ 4 GHz`20 dBm Output Power @ 18 GHz`High Associated Gain, 13 ...

Product Details

Description

Features:

`21 dBm Output Power @ 18 GHz
`High Associated Gain, 9 dB @ 18 GHz
`High Power Added Efficiency, 25%
`Broadband Operation, DC40 GHz
`0.25 µm Ti/Pd/Au Gates
`Passivated Surface
`Through-Substrate Via Hole Grounding

Specifications

Characteristic	Value
Drain to Source Voltage (V_DS)	6 V
Gate to Source Voltage (V_GS)	-4 V
Drain Current (I_DS)	I_DSS
Gate Current (I_GS)	1 mA
Total Power Dissipation (P_T)	700mW
Storage Temperature (T_ST)	-65 to +150°C
Channel Temperature (T_CH)	175°C

Description

The AFM04P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 400 µm. The device has excellent gain and power performance through 40 GHz, making AFM04P2-000 suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Throughsubstrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performance.

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