AFM04P3-213 Selling Leads, Price trend, AFM04P3-213 DataSheet download, circuit diagram from SeekIC.com

Features: `Low Noise Figure, 0.6 dB @ 4 GHz`20 dBm Output Power @ 18 GHz`High Associated Gain, 13 dB @ 4 GHz`High Power Added Efficiency, 25%`Broadband Operation, DC26 GHz`Available in Tape and Reel PackagingSpecifications Characteristic Value Drain to Source Voltage (VDS) 6 V Ga...

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SeekIC No. : 004278547 Detail

AFM04P3-213: Features: `Low Noise Figure, 0.6 dB @ 4 GHz`20 dBm Output Power @ 18 GHz`High Associated Gain, 13 dB @ 4 GHz`High Power Added Efficiency, 25%`Broadband Operation, DC26 GHz`Available in Tape and Reel...

AFM04P3-213 Data Sheet

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Part Number:: AFM04P3-213
Supply Ability:: 5000

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Upload time: 2024/4/26

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AFM04P2-000 evaluate
Features: `21 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Effic...
AFM04P3-000 evaluate
Features: `21 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Effic...
AFM04P3-212 evaluate
Features: `Low Noise Figure, 0.6 dB @ 4 GHz`20 dBm Output Power @ 18 GHz`High Associated Gain, 13 ...

Product Details

Description

Features:

`Low Noise Figure, 0.6 dB @ 4 GHz
`20 dBm Output Power @ 18 GHz
`High Associated Gain, 13 dB @ 4 GHz
`High Power Added Efficiency, 25%
`Broadband Operation, DC26 GHz
`Available in Tape and Reel Packaging

Specifications

Characteristic	Value
Drain to Source Voltage (V_DS)	6 V
Gate to Source Voltage (V_GS)	-4 V
Drain Current (I_DS)	I_DSS
Gate Current (I_GS)	1 A
Total Power Dissipation (P_T)	700 mW
Storage Temperature (T_ST)	-65 to +150°C
Channel Temperature (T_CH)	175°C

Description

The AFM04P3-212, 213 are high performance power GaAs MESFET chips having a gate length of 0.25 mm and a total gate periphery of 400 mm. These AFM04P3-212, 213 have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.They also have excellent noise performance and can be used in the first and second stage of low noise amplifier design. The AFM04P3 employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.

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