AFM06P2-000 Selling Leads, Price trend, AFM06P2-000 DataSheet download, circuit diagram from SeekIC.com

Features: `22.5 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Efficiency, 23%`Broadband Operation, DC40 GHz`0.25 mm Ti/Pd/Au Gates`Passivated Surface`Through-Substrate Via Hole GroundingSpecifications Characteristic Value Drain to Source Voltage (VDS) ...

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SeekIC No. : 004278548 Detail

AFM06P2-000: Features: `22.5 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Efficiency, 23%`Broadband Operation, DC40 GHz`0.25 mm Ti/Pd/Au Gates`Passivated Surface`Through-Substra...

AFM06P2-000 Data Sheet

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Part Number:: AFM06P2-000
Supply Ability:: 5000

Price Break

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/4/26

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Product Details

Description

Features:

`22.5 dBm Output Power @ 18 GHz
`High Associated Gain, 9 dB @ 18 GHz
`High Power Added Efficiency, 23%
`Broadband Operation, DC40 GHz
`0.25 mm Ti/Pd/Au Gates
`Passivated Surface
`Through-Substrate Via Hole Grounding

Specifications

Characteristic	Value
Drain to Source Voltage (V_DS)	6 V
Gate to Source Voltage (V_GS)	-4 V
Drain Current (I_DS)	I_DSS
Gate Current (I_GS)	2 mA
Total Power Dissipation (P_T)	1.4W
Storage Temperature (T_ST)	-65 to +150°C
Channel Temperature (T_CH)	175°C

Description

The AFM06P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 mm and a total gate periphery of 600 mm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. AFM06P2-000 employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.Through-substrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performance.

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