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AFP02N8-000

Features: · Low Noise Figure, 1.25 dB @ 4 GHz· High Associated Gain, 15.0 dB @ 4 GHz· High MAG, > 18 dB @ 4 GHz· 0.7 mm Ti/Pd/Au Gates· Passivated SurfaceSpecifications Characteristic Value Drain to Source Voltage (VDS) 6 V Gate to Source Voltage (VGS) -3 V Drain Current...

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SeekIC No. : 004278553 Detail

AFP02N8-000: Features: · Low Noise Figure, 1.25 dB @ 4 GHz· High Associated Gain, 15.0 dB @ 4 GHz· High MAG, > 18 dB @ 4 GHz· 0.7 mm Ti/Pd/Au Gates· Passivated SurfaceSpecifications Characteristic Val...

AFP02N8-000 Data Sheet

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Part Number:
AFP02N8-000
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

· Low Noise Figure, 1.25 dB @ 4 GHz
· High Associated Gain, 15.0 dB @ 4 GHz
· High MAG, > 18 dB @ 4 GHz
· 0.7 mm Ti/Pd/Au Gates
· Passivated Surface


Specifications

Characteristic
Value
Drain to Source Voltage (VDS)
6 V
Gate to Source Voltage (VGS)
-3 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
10 A
Total Power Dissipation (PT)
300 mW
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C



Description

The AFP02N8-000 general purpose PHEMT chip has excellent gain and noise performance through X band, making AFP02N8-000 suitable for a wide range of commercial and military applications.The device employs 0.7 mm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part.




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