Purchase AFP02N8-213, In-stock AFP02N8-213 From SeekIC.


Part Number: AFP02N8-213
Description: The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise perfo...


Description: The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise perfo...
The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performance through X band, making them suitable for a wide range of commercial applications. The devices employ 0.7 mm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part. Available in metal ceramic packages with a choice of two lead lengths. The components are also available in tape and reel and are ready for automatic insertion equipment.
| Characteristic |
Value |
| Drain to Source Voltage (VDS) |
6 V |
| Gate to Source Voltage (VGS) |
-3 V |
| Drain Current (IDS) |
IDSS |
| Gate Current (IGS) |
10 A |
| Total Power Dissipation (PT) |
300 mW |
| Storage Temperature (TST) |
-65 to +150°C |
| Channel Temperature (TCH) |
175°C |
AFP02N8-213
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