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Part Number: AFP02N8-213

 

 

 

 

Description: The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise perfo...


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AFP02N8-213 General Description


The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performance through X band, making them suitable for a wide range of commercial applications. The devices employ 0.7 mm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part. Available in metal ceramic packages with a choice of two lead lengths. The components are also available in tape and reel and are ready for automatic insertion equipment.

AFP02N8-213 Maximum Ratings

Characteristic
Value
Drain to Source Voltage (VDS)
6 V
Gate to Source Voltage (VGS)
-3 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
10 A
Total Power Dissipation (PT)
300 mW
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C

AFP02N8-213 Features

·Low Noise Figure, 1.55 dB @ 4 GHz
·High Associated Gain, 13 dB @ 4 GHz
·High MAG, > 15 dB @ 4 GHz
·0.7 mm Ti/Pd/Au Gates
·Passivated Surface
·Low Cost Metal Ceramic Package
·Available with Two Lead Lengths
·Available in Tape and Reel Packaging

AFP02N8-213 datasheet

AFP02N8-213
PDF/DataSheet Download

Find AFP02N8-213 Suppliers

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  • ALPHA [Alpha Industries] 
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  • AFP02N8-212 Datasheet Download

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