AM1011-500

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC 100°C)	1,360	W
IC	Device Current*	27	A
VCC	Collector-Supply Voltage*	55	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM1011-500 device is a high power Class C transistor specifically designed for L-Band Avionic applications involving high pulse burst duty cycles.

AM1011-500 is capable of operation over a wide range of pulse widths, duty cycles, and temperatures. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The AM1011-500 is supplied in the SIXPAC] Hermetic metal/ceramic package with internal input/ output matching structures.