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AM2729-110

Features: . REFRACTORY/G . OLD METALLIZATION . EMITTER SITE BALLASTED . 3:1 VSWR CAPABILITY·LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC · PACKAGE POUT = 105 W MIN. WITH 6.5 dB GAINPinoutSpecifications Symbol Parameter Value Unit PDISS...

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SeekIC No. : 004282105 Detail

AM2729-110: Features: . REFRACTORY/G . OLD METALLIZATION . EMITTER SITE BALLASTED . 3:1 VSWR CAPABILITY·LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC · PACKAGE POUT ...

AM2729-110 Data Sheet

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Part Number:
AM2729-110
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

. REFRACTORY/G . OLD METALLIZATION
. EMITTER SITE BALLASTED
. 3:1 VSWR CAPABILITY 
· LOW THERMAL RESISTANCE
. INPUT/OUTPUT MATCHING
. OVERLAY GEOMETRY
. METAL/CERAMIC HERMETIC
· PACKAGE POUT = 105 W MIN. WITH 6.5 dB GAIN


Pinout

Connection Diagram


Specifications


Symbol Parameter
Value
Unit
PDISS Power Dissipation* (TC100°C)
438
W
IC Device Current*
12
A
VCC Collector-Supply Voltage*
48
V
TJ Junction Temperature (Pulsed RF Operation)
250
TSTG Storage Temperature
- 65 to +200



Description

The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).

The AM2729-110 is supplied in the BIGPAC™ Hermetic  Metal/Ceramic package with internal Input/Output matching circuitry, and is intended for military and other high reliability applications.

 




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