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Part Number: AM2729-125

 

 

 

 

Description: The AM2729-125 device is a high power silicon bipolar NPN transistor specifically designed for medium pulse S-Band radar output and...


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AM2729-125 General Description


  The AM2729-125 device is a high power silicon bipolar NPN transistor specifically designed for medium pulse S-Band radar output and driver applications.

  This device is characterized at 50 msec pulse width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles and temperatures. Low RF thermal resistance,refractory/gold metallization and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).

  The AM2729-125 is supplied in the BIGPAC] Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.

AM2729-125 Maximum Ratings

Symbol Parameter Value Unit
PDISS Power Dissipation* (TC 3 75°C) 500 W
IC Device Current* 16 A
VCC Collector-Supply Voltage* 45 V
TJ Junction Temperature (Pulsed RF Operation) 250 °C
TSTG Storage Temperature - 65 to +200 °C

AM2729-125 Features

.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAYGEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.POUT=125WMIN.WITH7.0dBGAIN

AM2729-125 Connection Diagram

AM2729-125 Connection Diagram

AM2729-125 datasheet

AM2729-125
PDF/DataSheet Download

  • Datasheet: AM2729-125
  • File Size: 112526 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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