AM2729-125

Features:

.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAYGEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P_OUT=125WMIN.WITH7.0dBGAIN


Pinout




Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC 3 75°C)	500	W
IC	Device Current*	16	A
VCC	Collector-Supply Voltage*	45	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

  The AM2729-125 device is a high power silicon bipolar NPN transistor specifically designed for medium pulse S-Band radar output and driver applications.

  This device is characterized at 50 msec pulse width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles and temperatures. Low RF thermal resistance,refractory/gold metallization and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).

  The AM2729-125 is supplied in the BIGPAC] Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.