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Part Number: AM29DL163DB-70EF

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Description: The AM29DL163DB-70EF consists of 16 megabit, 3.0volt-only flash memory devices, organized as 1,048,576 words of 16 bits e...


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AM29DL163DB-70EF General Description


The AM29DL163DB-70EF consists of 16 megabit, 3.0volt-only flash memory devices, organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.

The features of AM29DL163DB-70EF can be summarized as:(1)Zero latency between read and write operations; (2)Four devices available with different bank sizes; (3)Top or bottom boot block ; (4)Pinout and software compatible with single-power-supply flash standard; (5)Access time as fast 70 ns ; (6)Program time: 7 s/word typical utilizing Accelerate function; (7)2 mA active read current at 1 MHz; (8)10 mA active read current at 5 MHz; (9)200 nA in standby or automatic sleep mode; (10)Minimum 1 million write cycles guaranteed per sector; (11)Supports Common Flash Memory Interface; (12)Any combination of sectors can be erased.

The absolute maximum ratings of AM29DL163DB-70EF are:(1)Storage Temperature:65°C to +150°C; (2)Ambient Temperature with Power Applied:65°C to +125°C; (3)Output Short Circuit Current:200 mA; (4)Voltage with Respect to Ground:VCC..0.5 V to +4.0 V,A9, OE#, and RESET# ..0.5 V to +12.5 V,WP#/ACC..0.5 V to +10.5 V,All other pins..0.5 V to VCC +0.5 V.

If you want to know more information such as the electrical characteristics about the AM29DL163DB-70EF, please download the datasheet in www.seekic.com or www.chinaicmart.com .

AM29DL163DB-70EF Connection Diagram

AM29DL163DB-70EF  Connection Diagram

AM29DL163DB-70EF datasheet

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