AM55- AM55-0016

Features:

·  High Gain State:
- Gain: 16dB, Noise Figure: 1.6dB
- Input IP3: +3dBm (@2.7V, 25mA)
·  Low Gain State:
- Insertion Loss: 5dB, Input IP3: +24dBm
·  Single Supply: +2.7 to +5 VDC
·  Low Cost MSOP-8 Plastic Package
·  Adjustable current: 10 to 30 mA with external resistor


Specifications

Parameter                              Absolute Maximum
V_DD                                               +6 VDC
Input Power                                   0 dBm
Current                                          30 mA
Channel Temperature²                  +150°C
Operating Temperature            -40°C to +85°C
Storage Temperature               -65°C to +150°C
1. Exceeding any one or combination of these limits may cause permanent damage.
2. Typical thermal resistance (_jc) = +99°C/W.


Description

M/A-COM's AM55- AM55-0016is a high dynamic range, switchable low noise amplifier in a low cost, MSOP 8-lead, surface mount, plastic package. The design utilizes a patented switching technique to provide a low insertion loss, high input IP3 bypass state in parallel with the high gain, low noise state. The LNA employs external input matching to obtain optimum noise figure performance and operating frequency flexibility. The AM55- AM55-0016 also features flexible biasing to control the current consumption vs. dynamic range trade-off. Its current can be controlled over a range of 10 mA to 30 mA with an external resistor.

Typical applications include receiver front ends in cellular band CDMA handsets. AM55- AM55-0016 is also useful as a switched gain block, buffer or driver in portable cellular systems.

The AM55- AM55-0016 is fabricated using a low-cost 0.5-micron gate length GaAs MESFET process. The process features full
passivation for increased performance and reliability.