AM82223-010 Selling Leads, Price trend, AM82223-010 DataSheet download, circuit diagram from SeekIC.com

PinoutSpecifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 75°C) 28 W IC Device Current* 1.2 A VCC Collector-Supply Voltage* 26 V TJ Junction Temperature 200 °C TSTG Storage Temperature - 65 to +200 °CDescriptionThe AM82223-010 is a common b...

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SeekIC No. : 004284438 Detail

AM82223-010: PinoutSpecifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 75°C) 28 W IC Device Current* 1.2 A VCC Collector-Supply Voltage* 26 V TJ Junction Tempera...

AM82223-010 Data Sheet

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Part Number:: AM82223-010
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/26

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AM82731-003 evaluate
Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC100°C) 23 W ...
AM82731-006 evaluate
Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 40 W ...
AM82731-012 evaluate
Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC50°C) 50 W ...

Product Details

Description

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation* (TC 75°C)	28	W
I_C	Device Current*	1.2	A
V_CC	Collector-Supply Voltage*	26	V
T_J	Junction Temperature	200	°C
T_STG	Storage Temperature	- 65 to +200	°C

Description

The AM82223-010 is a common base, silicon NPN bipolar transistor designed for high gain and efficiency in the 2.2 - 2.3 GHz frequency range.

Suitable for hi-rel aerospace telemetry applications, the AM82223-010 is provided in the industry-standard AMPAC™ metal/ceramic hermetic package and incorporates internal input and output impedance matching structures along with a rugged, emitter-site ballasted overlay die geometry.

AM82223-010 is capable of withstanding ¥:1 load mismatch at any phase angle under full rated operating conditions.

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