AO3400A

MOSFET N-CH 30V 5.7A SOT23

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AO3400A Picture
SeekIC No. : 003432538 Detail

AO3400A: MOSFET N-CH 30V 5.7A SOT23

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US $ .08~.29 / Piece | Get Latest Price
Part Number:
AO3400A
Mfg:
Supply Ability:
5000

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Upload time: 2024/3/27

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 5.7A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 5.7A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) @ Vgs: 13nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1100pF @ 15V
Power - Max: 1.4W Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)Alternate Packaging
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power - Max: 1.4W
Input Capacitance (Ciss) @ Vds: 1100pF @ 15V
Current - Continuous Drain (Id) @ 25° C: 5.7A
Gate Charge (Qg) @ Vgs: 13nC @ 4.5V
Supplier Device Package: SOT-23-3
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 5.7A, 10V


Description

The AO3400A is designed as one kind of N-channel enhancement mode field effect transistor that has five points of features:(1)VDS (V) = 30V; (2)ID = 5.7A (VGS = 10V); (3)RDS(ON) < 26.5m (VGS = 10V); (4)RDS(ON) < 32m (VGS = 4.5V); (5)RDS(ON) < 48m (VGS = 2.5V). This device is suitable for use as a load switch or in PWM applications.

The absolute maximum ratings of the AO3400A can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/- 12 V;(3)Continuous Drain Current AF: 4.7 or 5.7 A;(4)Pulsed Drain Current: 25 A;(5)Power Dissipation: 0.9 W or 1.4 W;(6)Junction and Storage Temperature Range: -55 to 150 °C;(7)Maximum Junction-to-Ambient: 70 to 90 °C/W;(8)Maximum Junction-to-Lead: 63 to 80 °C/W.

The electrical characteristics of AO3400A can be summarized as:(1)Drain-Source Breakdown Voltage: 30 V;(2)Zero Gate Voltage Drain Current: 1 or 5 uA;(3)Gate-Body leakage current: 100 nA;(4)Gate Threshold Voltage: 0.7 to 1.5 V;(5)On state drain current: 25 A;(6)Forward Transconductance: 26 S;(7)Diode Forward Voltage: 0.72 to 1.0 V;(8)Maximum Body-Diode Continuous Current: 2.0 A. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .






Parameters:

Technical/Catalog InformationAO3400A
VendorAlpha & Omega Semiconductor Inc (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5.7A
Rds On (Max) @ Id, Vgs26.5 mOhm @ 5.7A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 15V
Power - Max1.4W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs13nC @ 4.5V
Package / CaseSOT-23-3, TO-236-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO3400A
AO3400A
785 1000 6 ND
78510006ND
785-1000-6



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