AO3413

MOSFET P-CH -20V -3.0A SOT23

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SeekIC No. : 003430874 Detail

AO3413: MOSFET P-CH -20V -3.0A SOT23

floor Price/Ceiling Price

US $ .07~.34 / Piece | Get Latest Price
Part Number:
AO3413
Mfg:
Supply Ability:
5000

Price Break

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  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.34
  • $.2
  • $.16
  • $.11
  • $.09
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET P-Channel, Metal Oxide Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 3A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 97 mOhm @ 3A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 6.1nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 540pF @ 10V
Power - Max: 1.4W Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 3A
Power - Max: 1.4W
Supplier Device Package: SOT-23-3
Input Capacitance (Ciss) @ Vds: 540pF @ 10V
Gate Charge (Qg) @ Vgs: 6.1nC @ 4.5V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 97 mOhm @ 3A, 4.5V


Features:

VDS (V) = -20V
ID = -3 A
RDS(ON) < 97m (VGS = -4.5V)
RDS(ON) < 130m (VGS = -2.5V)
RDS(ON) < 190m (VGS = -1.8V)





Specifications

Paramete Symbol Maximum Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain Current A TA=25°C ID -3 A
TA=70°C -2.4
Pulsed Drain Current B IDM -15
Power Dissipation A TA=25°C PD 1.4 W
TA=70°C 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C





Description

The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.




Parameters:

Technical/Catalog InformationAO3413
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs97 mOhm @ 3A, 4.5V
Input Capacitance (Ciss) @ Vds 540pF @ 10V
Power - Max1.4W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs6.1nC @ 4.5V
Package / CaseSOT-23-3, TO-236-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO3413
AO3413
785 1008 2 ND
78510082ND
785-1008-2



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