AO3418

MOSFET N-CH 30V 3.8A SOT23

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SeekIC No. : 003430846 Detail

AO3418: MOSFET N-CH 30V 3.8A SOT23

floor Price/Ceiling Price

US $ .05~.06 / Piece | Get Latest Price
Part Number:
AO3418
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • 3000~6000
  • 6000~12000
  • Unit Price
  • $.06
  • $.05
  • $.05
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 3.8A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.8A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) @ Vgs: 3.2nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 270pF @ 15V
Power - Max: 1.4W Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)Alternate Packaging
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power - Max: 1.4W
Current - Continuous Drain (Id) @ 25° C: 3.8A
Supplier Device Package: SOT-23-3
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.8A, 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Gate Charge (Qg) @ Vgs: 3.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 270pF @ 15V


Features:

VDS (V) = 30V
ID = 3.8 A
RDS(ON) < 60m (VGS = 10V)
RDS(ON) < 70m (VGS = 4.5V)
RDS(ON) < 155m (VGS = 2.5V)





Specifications

Paramete Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current A TA=25°C ID 3.8 A
TA=70°C 3.1
Pulsed Drain Current B IDM 15
Power Dissipation A TA=25°C PD 1.4 W
TA=70°C 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C





Description

The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418L ( Green Product ) is offered in a lead-free package.




Parameters:

Technical/Catalog InformationAO3418
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C3.8A
Rds On (Max) @ Id, Vgs60 mOhm @ 3.8A, 10V
Input Capacitance (Ciss) @ Vds 270pF @ 15V
Power - Max1.4W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3.2nC @ 4.5V
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO3418
AO3418
785 1012 2 ND
78510122ND
785-1012-2



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