MOSFET N-CH 30V 3.8A SOT23
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Series: | - | Manufacturer: | Alpha & Omega Semiconductor Inc | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 15.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 30V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 3.8A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3.8A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 1.8V @ 250µA | Gate Charge (Qg) @ Vgs: | 3.2nC @ 4.5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 270pF @ 15V | ||
Power - Max: | 1.4W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-236-3, SC-59, SOT-23-3 | Supplier Device Package: | SOT-23-3 |
Paramete | Symbol | Maximum | Units | |
Drain-Source Voltage | VDS | 30 | V | |
Gate-Source Voltage | VGS | ±12 | V | |
Continuous Drain Current A | TA=25°C | ID | 3.8 | A |
TA=70°C | 3.1 | |||
Pulsed Drain Current B | IDM | 15 | ||
Power Dissipation A | TA=25°C | PD | 1.4 | W |
TA=70°C | 0.9 | |||
Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C |
Technical/Catalog Information | AO3418 |
Vendor | Alpha & Omega Semiconductor Inc |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 3.8A |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 3.8A, 10V |
Input Capacitance (Ciss) @ Vds | 270pF @ 15V |
Power - Max | 1.4W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 3.2nC @ 4.5V |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | AO3418 AO3418 785 1012 2 ND 78510122ND 785-1012-2 |