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Part Number: AO4726

 

 

 

 

Description: SRFET TM The AO4726/L uses advanced trench technology with a monolithically integrated Schottky diode ...


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AO4726 General Description


SRFET TM The AO4726/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS(ON) and low gate charge.

This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. AO4726 and AO4726L are electrically identical.
-RoHS Compliant
-AO4726L is Halogen Free

AO4726 Maximum Ratings

Parameter Symbol Maximum Units
Gate-Source Voltage
Drain-Source Voltage
VDS
VGS
30
±12
V
Continuous Drain
Current AF
TA=25 IDSM 18 A
TA=70 14
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
Pulsed Drain Current B
IDM
IAR
EAR
80
42
265
A
mJ
Power Dissipation TA=25 PDSM 3.1 W
TA=70 2.0
Junction and Storage Temperature Range TJ, TSTG -55 to 150

AO4726 Features

VDS (V) = 30V
ID =18A (VGS = 10V)
RDS(ON) < 6mΩ (VGS = 10V)
RDS(ON) < 7mΩ (VGS = 4.5V)

AO4726 Connection Diagram

AO4726  Connection Diagram

AO4726 datasheet

AO4400
PDF/DataSheet Download

  • Datasheet: AO4400
  • File Size: 367760 KB
  • Manufacturer: AOSMD [Alpha & Omega Semiconductors]
  • Click here to Download

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