AO4914

Features:

Q1 Q2
V_DS (V) = 30V V_DS(V) = 30V
I_D = 8.5A I_D = 8.5A
^R_DS(ON) < 18m <18m (V_GS = 10V)
R_DS(ON) < 28m <28m (V_GS = 4.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 3A, V_F<0.5V@1A

Specifications

Paramete		Symbol	Max Q1	Max Q2	Units
Drain-Source Voltage		VDS	30	30	V
Gate-Source Voltage		VGS	±20	±20	V
Continuous Drain Current A	TA=25°C	ID	8.5	8.5	A
	TA=70°C		6.6	6.6
Pulsed Drain Current B		IDM	30	30
Power Dissipation	TA=25°C	PD	2	2	W
	TA=70°C		1.28	1.28
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	-55 to 150	°C

Description

The AO4914 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further AO4914 is Pb-free (meets ROHS & Sony 259 specifications). AO4914L is a Green Product ordering option. AO4914 and AO4914L are electrically identical.