AO4916L

Features:

V_DS (V) = 30V
I_D = 8.5A
R_DS(ON) < 17m (V_GS = 10V)
R_DS(ON) < 27m (V_GS = 4.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 3A, V_F=0.5V@1A


Specifications

Paramete		Symbol	MOSFET	Schottky	Units
Drain-Source Voltage		VDS	30		V
Gate-Source Voltage		VGS	±20		V
Continuous Drain Current A	TA=25°C	ID	8.5		A
	TA=70°C		6.6
Pulsed Drain Current B		IDM	40
Schottky reverse voltage		VKA		30	V
Continuous Forward Current A	TA=25°C	IF		3	A
	TA=70°C			2
Pulsed Drain Current B		IDM		40
Power Dissipation	TA=25°C	PD	2	2	W
	TA=70°C		1.28	1.28
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	-55 to 150	°C

Description

The AO4916L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. AO4916L
( Green Product ) is offered in a lead-free package.