AO6409

MOSFET P-CH -20V -5A 6-TSOP

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SeekIC No. : 003430910 Detail

AO6409: MOSFET P-CH -20V -5A 6-TSOP

floor Price/Ceiling Price

US $ .07~.08 / Piece | Get Latest Price
Part Number:
AO6409
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • 3000~6000
  • 6000~12000
  • Unit Price
  • $.08
  • $.08
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 17.2nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1450pF @ 10V
Power - Max: 2W Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 6-TSOP
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 5A
Power - Max: 2W
Package / Case: SC-74, SOT-457
Manufacturer: Alpha & Omega Semiconductor Inc
Gate Charge (Qg) @ Vgs: 17.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 1450pF @ 10V
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 4.5V


Features:

VDS (V) = -20V
ID = -5 A
RDS(ON) < 45m (VGS = -4.5V)
RDS(ON) < 56m (VGS = -2.5V)
RDS(ON) < 75m (VGS = -1.8V)
ESD Rating: 3000V HBM





Specifications

Paramete Symbol Maximum Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain Current A TA=25°C ID -5.0 A
TA=70°C -4.2
Pulsed Drain Current B IDM -30
Power Dissipation A TA=25°C PD 2 W
TA=70°C 1.28
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C






Description

The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO6409L ( Green Product ) is offered in a lead-free package.




Parameters:

Technical/Catalog InformationAO6409
VendorAlpha & Omega Semiconductor Inc (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs45 mOhm @ 5A, 4.5V
Input Capacitance (Ciss) @ Vds 1450pF @ 10V
Power - Max2W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs17.2nC @ 4.5V
Package / Case6-TSOP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO6409
AO6409
785 1074 6 ND
78510746ND
785-1074-6



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