AO6601

MOSFET N/P-CH COMPL 30V 6-TSOP

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AO6601 Picture
SeekIC No. : 003430144 Detail

AO6601: MOSFET N/P-CH COMPL 30V 6-TSOP

floor Price/Ceiling Price

Part Number:
AO6601
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: N and P-Channel FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25° C: 3.4A, 2.3A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) @ Vgs: 4.34nC @ 4.5V Drain Current (Idss at Vgs=0) : 8 mA to 20 mA
Input Capacitance (Ciss) @ Vds: 390pF @ 15V Power - Max: 1.15W
Mounting Type: Surface Mount Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP    

Description

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Mounting Type: Surface Mount
Series: -
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.15W
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Manufacturer: Alpha & Omega Semiconductor Inc
Current - Continuous Drain (Id) @ 25° C: 3.4A, 2.3A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3A, 10V
Gate Charge (Qg) @ Vgs: 4.34nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 390pF @ 15V


Features:

·n-channel p-channel
·VDS (V) = 30V -30V
·ID = 3.4A (VGS = 10V) -2.3A (VGS = -10V)
·RDS(ON)
·< 60mΩ (VGS = 10V) < 135mΩ (VGS = -10V)
·< 75mΩ (VGS = 4.5V) < 185mΩ (VGS = -4.5V)
·< 115mΩ(VGS = 2.5V) < 265mΩ (VGS = -2.5V)





Pinout

  Connection Diagram




Specifications

Parameter
Symbol
Max n-channel
Max p-channel
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-30
±12
-30
±12
V
V
Continuous Drain
Current A
TC=25°C
TC=70°C
ID
3.4
2.7

-2.3
-1.8
A
Pulsed Drain CurrentB
IDM
30
-30
Power Dissipation A
TC=25°C
TC=70°C

PD
1.15
0.73
1.15
0.73
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
-55 to 150
°C





Description

The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6601L is a Green Product ordering option. AO6601 and AO6601L are electrically identical.






Parameters:

Technical/Catalog InformationAO6601
VendorAlpha & Omega Semiconductor Inc (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C3.4A, 2.3A
Rds On (Max) @ Id, Vgs60 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 390pF @ 15V
Power - Max1.15W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs4.34nC @ 4.5V
Package / Case6-TSOP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO6601
AO6601
785 1076 6 ND
78510766ND
785-1076-6



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