Purchase AO6604, In-stock AO6604 From SeekIC.
MFG:AOS
Part Number: AO6604
MFG: AOS
Description: The AO6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs ...
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AO6604
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DataSheet
General Description
AO6604 General Description
The AO6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AO6604L( Green Product ) is offered in a lead-free package.
AO6604 Maximum Ratings
| Paramete | Symbol | Max n-channel | Max p-channel | Units | |
| Drain-Source Voltage | VDS | 20 | -20 | V | |
| Gate-Source Voltage | VGS | ±8 | ±8 | V | |
| Continuous Drain Current A | TA=25°C | ID | 3.4 | -2.5 | A |
| TA=70°C | 2.7 | -2.0 | |||
| Pulsed Drain Current B | IDM | 15 | -15 | ||
| Power Dissipation A | TA=25°C | PD | 1.15 | 1.15 | W |
| TA=70°C | 0.73 | 0.73 | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | -55 to 150 | °C | |
AO6604 Features
VDS (V) -20V -20V
ID = 3.4A -2.5A
RDS(ON)
< 60m < 110m (VGS = 4.5V)
< 75m < 140m (VGS = 2.5V)
< 100m < 200m (VGS = 1.8V)
ID = 3.4A -2.5A
RDS(ON)
< 60m < 110m (VGS = 4.5V)
< 75m < 140m (VGS = 2.5V)
< 100m < 200m (VGS = 1.8V)
AO6604
PDF/DataSheet Download
- Datasheet: AO6604
- File Size: 200969 KB
- Manufacturer: ETC [ETC]
- Click here to Download
- ·AO6400
- ETC [ETC]
- N-Channel Enhancement Mode Field Effect Transistor
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- ·AO6401
- ALPHA
- P-Channel Enhancement Mode Field Effect Transistor
- 475136 KB
- ·AO6402
- ETC [ETC]
- N-Channel Enhancement Mode Field Effect Transistor
- 115764 KB
- ·AO6402L
- ETC [ETC]
- N-Channel Enhancement Mode Field Effect Transistor
- 115764 KB
- ·AO6403
- ALPHA
- P-Channel Enhancement Mode Field Effect Transistor
- 431854 KB
- ·AO6404
- ALPHA
- N-Channel Enhancement Mode Field Effect Transistor
- 431854 KB
- ·AO6405
- ALPHA [Alpha Industries]
- P-Channel Enhancement Mode Field Effect Transistor
- 291453 KB
- ·AO6407
- ETC [ETC]
- P-Channel Enhancement Mode Field Effect Transistor
- 284930 KB
AO6604 Relative Products
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The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 s...
AO6424
AO6422
The AO6422/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application. AO6422 and AO6422L are electrically identical.-RoHS Compliant...
AO6420
AO6419
The AO6419 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6419 is Pb-free (meets ROHS & Sony 259 specifications). AO6419L is a...
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