AO6604

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Series: -
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 1.15W
Supplier Device Package: 6-TSOP
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
Package / Case: SC-74, SOT-457
Input Capacitance (Ciss) @ Vds: 570pF @ 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Current - Continuous Drain (Id) @ 25° C: 3.4A, 2.5A
Gate Charge (Qg) @ Vgs: 8.1nC @ 4.5V


Features:

V_DS (V) -20V -20V
I_D = 3.4A -2.5A
R_DS(ON)
< 60m < 110m (V_GS = 4.5V)
< 75m < 140m (V_GS = 2.5V)
< 100m < 200m (V_GS = 1.8V)




Specifications

Paramete		Symbol	Max n-channel	Max p-channel	Units
Drain-Source Voltage		VDS	20	-20	V
Gate-Source Voltage		VGS	±8	±8	V
Continuous Drain Current A	TA=25°C	ID	3.4	-2.5	A
	TA=70°C		2.7	-2.0
Pulsed Drain Current B		IDM	15	-15
Power Dissipation A	TA=25°C	PD	1.15	1.15	W
	TA=70°C		0.73	0.73
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	-55 to 150	°C

Description

The AO6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AO6604L( Green Product ) is offered in a lead-free package.




Parameters:

Technical/Catalog Information	AO6604
Vendor	Alpha & Omega Semiconductor Inc (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.4A, 2.5A
Rds On (Max) @ Id, Vgs	60 mOhm @ 3.4A, 4.5V
Input Capacitance (Ciss) @ Vds	570pF @ 10V
Power - Max	1.15W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	8.1nC @ 4.5V
Package / Case	6-TSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AO6604 AO6604 785 1078 6 ND 78510786ND 785-1078-6