AO6800

MOSFET DUAL N-CH 30V 3.4A 6-TSOP

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AO6800 Picture
SeekIC No. : 003430086 Detail

AO6800: MOSFET DUAL N-CH 30V 3.4A 6-TSOP

floor Price/Ceiling Price

US $ .11~.32 / Piece | Get Latest Price
Part Number:
AO6800
Mfg:
Supply Ability:
5000

Price Break

  • Qty
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  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.32
  • $.22
  • $.19
  • $.17
  • $.14
  • $.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25° C: 3.4A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) @ Vgs: 4.96nC @ 4.5V Drain Current (Idss at Vgs=0) : 8 mA to 20 mA
Input Capacitance (Ciss) @ Vds: 390pF @ 15V Power - Max: 1.15W
Mounting Type: Surface Mount Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP    

Description

FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Mounting Type: Surface Mount
Series: -
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.15W
Supplier Device Package: 6-TSOP
Current - Continuous Drain (Id) @ 25° C: 3.4A
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 390pF @ 15V
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
Gate Charge (Qg) @ Vgs: 4.96nC @ 4.5V


Features:

VDS (V)= 30V
ID = 3.4 A
RDS(ON) < 60m (VGS = 10V)
RDS(ON) < 75m (VGS = 4.5V)
RDS(ON) < 115m (VGS = 2.5V)





Specifications

Paramete Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current A TA=25°C ID 3.4 A
TA=70°C 2.7
Pulsed Drain Current B IDM 20
Power Dissipation A TA=25°C PD 1.15 W
TA=70°C 0.73
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C






Description

The AO6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.




Parameters:

Technical/Catalog InformationAO6800
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C3.4A
Rds On (Max) @ Id, Vgs60 mOhm @ 3.4A, 10V
Input Capacitance (Ciss) @ Vds 390pF @ 15V
Power - Max1.15W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs4.96nC @ 4.5V
Package / Case6-TSOP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO6800
AO6800
785 1081 2 ND
78510812ND
785-1081-2



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