AO7407

MOSFET P-CH -20V -1.2A SC70-3

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AO7407 Picture
SeekIC No. : 003433951 Detail

AO7407: MOSFET P-CH -20V -1.2A SC70-3

floor Price/Ceiling Price

Part Number:
AO7407
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET P-Channel, Metal Oxide Gain : 11.5 dB at 500 MHz
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 1.2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.2A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 6.2nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 540pF @ 10V
Power - Max: 350mW Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: SC-70, SOT-323
Power - Max: 350mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) @ Vgs: 6.2nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 1.2A
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-323
Input Capacitance (Ciss) @ Vds: 540pF @ 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.2A, 4.5V


Features:

VDS (V) = -20V
ID = -1.2 A
RDS(ON) < 135m (VGS = -4.5V)
RDS(ON)< 170m (VGS = -2.5V)
RDS(ON) < 220m (VGS = -1.8V)





Specifications

Paramete Symbol Maximum Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain Current A TA=25°C ID -1.2 A
TA=70°C -1.0
Pulsed Drain Current B IDM -10
Power Dissipation A TA=25°C PD 0.35 W
TA=70°C 0.22
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C






Description

The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.




Parameters:

Technical/Catalog InformationAO7407
VendorAlpha & Omega Semiconductor Inc (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C1.2A
Rds On (Max) @ Id, Vgs135 mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) @ Vds 540pF @ 10V
Power - Max350mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs6.2nC @ 4.5V
Package / CaseSC-70
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO7407
AO7407
785 1088 6 ND
78510886ND
785-1088-6



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