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Part Number: AO8701L

 

 

 

 

Description: The AO8701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provi...


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AO8701L General Description


The AO8701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. AO8701L ( Green Product ) is offered in a lead-free package.

AO8701L Maximum Ratings

Paramete Symbol MOSFET Schottky Units
Drain-Source Voltage VDS -30   V
Gate-Source Voltage VGS ±12   V
Continuous Drain Current A TA=25°C ID -4.2   A
TA=70°C -3.5  
Pulsed Drain Current B IDM -30  
Schottky reverse voltage VKA   30 V
Continuous Forward Current A TA=25°C IF   3 A
TA=70°C   2
Pulsed Drain Current B IFM   40
Power Dissipation TA=25°C PD 1.4 1.4 W
TA=70°C 1 1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C

AO8701L Features

VDS (V) = -30V
ID = -4.2A
RDS(ON) < 50m (VGS = 10V)
RDS(ON) < 65m (VGS = 4.5V)
RDS(ON)  < 120m (VGS = 2.5V)

AO8701L datasheet

AO8701L
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