MOSFET N-CH 60V 38A TO-252
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Series: | - | Manufacturer: | Alpha & Omega Semiconductor Inc | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 15.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 60V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 37A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 20A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2.7V @ 250µA | Gate Charge (Qg) @ Vgs: | 68nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 2300pF @ 30V | ||
Power - Max: | 60W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | Supplier Device Package: | TO-252, (D-Pak) |
Parameter | Symbol | Maximum | Units | |
Drain-Source Voltage | VDS | 60 | V | |
Gate-Source Voltage | VGS | ±20 | V | |
Continuous Drain CurrentB,G | TC=25°C | ID | 38 | A |
TC=100°C | 27 | |||
Pulsed Drain Current | IDM | 60 | ||
Avalanche Current C | IAR | 30 | A | |
Repetitive avalanche energy L=0.1mH C | EAR | 140 | mJ | |
Power Dissipation B | TC=25°C | PD | 60 | W |
TC=100°C | 30 | |||
Junction and Storage Temperature Range | TJ, TSTG | -55 to 175 | °C |
Technical/Catalog Information | AOD442 |
Vendor | Alpha & Omega Semiconductor Inc |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 38A |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 20A, 10V |
Input Capacitance (Ciss) @ Vds | 2300pF @ 30V |
Power - Max | 60W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 68nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | AOD442 AOD442 785 1107 2 ND 78511072ND 785-1107-2 |