AOD442

MOSFET N-CH 60V 38A TO-252

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SeekIC No. : 003430938 Detail

AOD442: MOSFET N-CH 60V 38A TO-252

floor Price/Ceiling Price

US $ .24~.61 / Piece | Get Latest Price
Part Number:
AOD442
Mfg:
Supply Ability:
5000

Price Break

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  • 25~100
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  • 500~1000
  • Unit Price
  • $.61
  • $.47
  • $.41
  • $.36
  • $.3
  • $.24
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 37A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) @ Vgs: 68nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2300pF @ 30V
Power - Max: 60W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 60V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Gate Charge (Qg) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power - Max: 60W
Current - Continuous Drain (Id) @ 25° C: 37A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 2300pF @ 30V


Features:

VDS (V) = 60V
ID = 38A
RDS(ON) < 20m (VGS = 10V)
RDS(ON) < 25m (VGS = 4.5V)





Specifications

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain CurrentB,G TC=25°C ID 38 A
TC=100°C 27
Pulsed Drain Current IDM 60
Avalanche Current C IAR 30 A
Repetitive avalanche energy L=0.1mH C EAR 140 mJ
Power Dissipation B TC=25°C PD 60 W
TC=100°C 30
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C





Description

The AOD442 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. AOD442L ( Green Product ) is offered in a lead-free package.




Parameters:

Technical/Catalog InformationAOD442
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C38A
Rds On (Max) @ Id, Vgs20 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 2300pF @ 30V
Power - Max60W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs68nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AOD442
AOD442
785 1107 2 ND
78511072ND
785-1107-2



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