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AOI409

MOSFET P-CH 60V 26A TO251A

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SeekIC No. : 003431304 Detail

AOI409: MOSFET P-CH 60V 26A TO251A

AOI409 Data Sheet

floor Price/Ceiling Price

US $ .21~.21 / Piece | Get Latest Price
Part Number:
AOI409
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~3500
  • Unit Price
  • $.21
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/15

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 26A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 40 mOhm @ 20A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) @ Vgs: 54nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3600pF @ 30V
Power - Max: 2.5W Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: *    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Current - Continuous Drain (Id) @ 25° C: 26A
Gate Charge (Qg) @ Vgs: 54nC @ 10V
Supplier Device Package: *
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 40 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds: 3600pF @ 30V


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