Features: n-channel p-channelVDS (V) = 40V-40VID = 6.5A (VGS=10V) -5.5A (VGS = -10V)RDS(ON) RDS(ON)< 35m (VGS=10V) < 52m (VGS = -10V)< 47m (VGS=4.5V) < 80m (VGS = -4.5V)PinoutSpecifications Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage VDS 40 -4...
AOP611: Features: n-channel p-channelVDS (V) = 40V-40VID = 6.5A (VGS=10V) -5.5A (VGS = -10V)RDS(ON) RDS(ON)< 35m (VGS=10V) < 52m (VGS = -10V)< 47m (VGS=4.5V) < 80m (VGS = -4.5V)PinoutSpecificati...
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Parameter | Symbol | Max n-channel | Max p-channel | Units | |
Drain-Source Voltage | VDS | 40 | -40 | V | |
Gate-Source Voltage | VGS | ±20 | ±20 | V | |
Continuous Drain Current A |
TA=25 | ID | 6.5 |
-5.5 | A |
TA=70 | 5.3 | -4.4 | |||
Pulsed Drain Current B | IDM | 30 | -25 | ||
Power Dissipation | TA=25 | PD | 2.5 | 2.5 | W |
TA=70 | 1.6 | 1.6 | |||
Avalanche Current B | IAR | 13 | 17 | A | |
Repetitive avalanche energy 0.3mH B | EAR | 25 | 43 | mJ | |
Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | -55 to 150 |
The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications). AOP611L is a Green Product ordering option. AOP611 and AOP611L are electrically identical.