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AOT11S60L

MOSFET N-CH 600V 11A TO220

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SeekIC No. : 003430749 Detail

AOT11S60L: MOSFET N-CH 600V 11A TO220

AOT11S60L Data Sheet

floor Price/Ceiling Price

US $ .62~1.37 / Piece | Get Latest Price
Part Number:
AOT11S60L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $1.37
  • $1.05
  • $.96
  • $.86
  • $.74
  • $.62
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Series: aMOS™ Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 11A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 399 mOhm @ 3.8A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) @ Vgs: 11nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 545pF @ 100V
Power - Max: 178W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 11nC @ 10V
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Input Capacitance (Ciss) @ Vds: 545pF @ 100V
Manufacturer: Alpha & Omega Semiconductor Inc
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Series: aMOS™
Rds On (Max) @ Id, Vgs: 399 mOhm @ 3.8A, 10V
Power - Max: 178W


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