AOT14N50

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25° C: 14A
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 51nC @ 10V
Supplier Device Package: TO-220-3
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds: 2297pF @ 25V
Power - Max: 278W


Features:

`V<sub>DS</sub> (V) = 600V@150°C
`I_D=14A
`R_DS(ON)<0.38 (VGS = 10V)




Specifications

Parameter	Symbol	AOT14N50	AOTF14N50	Unit
Drain-Source Voltage	VDS	500	500	V
Gate-Source Voltage	VGS	±30	±30	V
Continuous Drain Current TC=25 TC=100	ID	14 9.6	14 9.6	A
Pulsed Drain Current C	IDM	56	56	A
Avalanche Current C	IAR	6	6	A
Repetitive avalanche energy L=0.1mH C	EAR	540	540	mJ
Single pulsed avalanche energy G	EAS	1080	1080	mJ
Peak diode recovery dv/dt	dv/dt	5	5	V/ns
Power Dissipation B TC=25 TC=100	PD	223 1.8	50 0.4	W/
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds	TL	300	300
Operating Junction and Storage Temperature Range	TJ,TSTG	- 55 to 175	- 55 to 175

* Drain current limited by maximum junction temperature.




Description

The AOT14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.