AOT1N60

MOSFET N-CH 600V 1.3A TO-220

product image

AOT1N60 Picture
SeekIC No. : 003432651 Detail

AOT1N60: MOSFET N-CH 600V 1.3A TO-220

floor Price/Ceiling Price

US $ .12~.43 / Piece | Get Latest Price
Part Number:
AOT1N60
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~5000
  • 5000~10000
  • Unit Price
  • $.43
  • $.3
  • $.26
  • $.22
  • $.19
  • $.15
  • $.14
  • $.12
  • $.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 1.3A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 9 Ohm @ 650mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) @ Vgs: 8nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 160pF @ 25V
Power - Max: 41.7W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220-3    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 8nC @ 10V
Drain to Source Voltage (Vdss): 600V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power - Max: 41.7W
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Current - Continuous Drain (Id) @ 25° C: 1.3A
Supplier Device Package: TO-220-3
Input Capacitance (Ciss) @ Vds: 160pF @ 25V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 9 Ohm @ 650mA, 10V


Features:

VDS (V) = 700V @ 150
ID = 1.3A
RDS(ON) < 9 (VGS = 10V)


100% UIS Tested!
100% R g Tested!
Ciss , C oss , C rss Tested!





Specifications

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current B TC=25 ID 1.3
A
TC=100 0.8
Pulsed Drain Current C IDM 4
Avalanche Current C IAR 1.0 A
Repetitive avalanche energy C EAR 15 mJ
Single pulsed avalanche energy G EAS 30 mJ
Peak diode recovery dv/dt dv/dt 5 V/ns
Power Dissipation B TC=25 PD 41.7 W
Derate above 25 0.33 W/
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL 300
Junction and Storage Temperature Range TJ, TSTG -55 to 150





Description

The AOT1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.






Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Cables, Wires
Cables, Wires - Management
Soldering, Desoldering, Rework Products
Inductors, Coils, Chokes
Discrete Semiconductor Products
Potentiometers, Variable Resistors
View more