Position: Home  > All Categories> Integrated Circuits (ICs) > AOT298L

AOT298L

MOSFET N CH 100V 58A TO220

product image

AOT298L Picture
See larger image
SeekIC No. : 003431859 Detail

AOT298L: MOSFET N CH 100V 58A TO220

AOT298L Data Sheet

floor Price/Ceiling Price

US $ .32~.88 / Piece | Get Latest Price
Part Number:
AOT298L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~5000
  • 5000~10000
  • Unit Price
  • $.88
  • $.7
  • $.62
  • $.54
  • $.48
  • $.38
  • $.35
  • $.33
  • $.32
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/6/15

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 58A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) @ Vgs: 27nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1670pF @ 50V
Power - Max: 2.1W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Gate Charge (Qg) @ Vgs: 27nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Current - Continuous Drain (Id) @ 25° C: 58A
Supplier Device Package: TO-220
Manufacturer: Alpha & Omega Semiconductor Inc
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds: 1670pF @ 50V


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Prototyping Products
AVT4168
DE1
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
View more