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AOT7S60L

MOSFET N-CH 600V TO220

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SeekIC No. : 003431090 Detail

AOT7S60L: MOSFET N-CH 600V TO220

AOT7S60L Data Sheet

floor Price/Ceiling Price

US $ .37~1.03 / Piece | Get Latest Price
Part Number:
AOT7S60L
Mfg:
Supply Ability:
5000

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  • 25~100
  • 100~250
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  • Unit Price
  • $1.03
  • $.82
  • $.72
  • $.63
  • $.56
  • $.44
  • $.41
  • $.39
  • $.37
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: aMOS™ Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 7A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) @ Vgs: 8.2nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 372pF @ 100V
Power - Max: 104W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Gate Charge (Qg) @ Vgs: 8.2nC @ 10V
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25° C: 7A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Power - Max: 104W
Supplier Device Package: TO-220-3
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Series: aMOS™
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Input Capacitance (Ciss) @ Vds: 372pF @ 100V


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