AOTF12N60

MOSFET N-CH 600V 12A TO220F

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AOTF12N60 Picture
SeekIC No. : 003431894 Detail

AOTF12N60: MOSFET N-CH 600V 12A TO220F

floor Price/Ceiling Price

US $ .34~.34 / Piece | Get Latest Price
Part Number:
AOTF12N60
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1000
  • Unit Price
  • $.34
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 12A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) @ Vgs: 50nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2100pF @ 25V
Power - Max: 50W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 12A
Gate Charge (Qg) @ Vgs: 50nC @ 10V
Drain to Source Voltage (Vdss): 600V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power - Max: 50W
Packaging: Tube
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
Package / Case: TO-220-3 Full Pack
Input Capacitance (Ciss) @ Vds: 2100pF @ 25V
Supplier Device Package: TO-220F
Manufacturer: Alpha & Omega Semiconductor Inc


Features:

VDS (V) = 700V @ 150°C
ID = 12A
RDS(ON) < 0.55 (VGS = 10V)
100% UIS Tested!
100% R g Tested!
Ciss , C oss , C rss Tested!





Specifications

Item
Symbol
AOT12N60
AOTF12N60
Unit
Drain to Source voltage
VDS
600
V
Gate to Source voltage
VGS
±30
V
Continuous Drain
Current B
TC=25
ID
12
12*
A
TC=100
8.1
8.1*
Pulsed Drain Current C
IDM
48
Avalanche Current C
IAR
5.5
A
Repetitive avalanche energy C
EAR
450
mJ
Single pulsed avalanche energy G
EAS
900
mJ
Peak diode recovery dv/dt
dv/dt
5
V/ns
Power Dissipation B TC=25
PD
223
50
W
Derate above 25
1.8
0.4
W/
Junction and Storage Temperature Range
TJ, TSTG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300





Description

The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.






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