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AP2306N

Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ± 12 V ID@TA=25 Continuous Drain Current3, VGS @ 4.5V 5.3 A ID@TA=70 Continuous Drain Current3, VGS @ 4.5V 4.3 A IDM Pulsed Drain Current1,2 10 A PD@TA=25 To...

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AP2306N: Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ± 12 V ID@TA=25 Continuous Drain Current3, VGS @ 4.5V 5.3 A ID@TA=70 ...

AP2306N Data Sheet

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Part Number:
AP2306N
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ± 12 V
ID@TA=25 Continuous Drain Current3, VGS @ 4.5V 5.3 A
ID@TA=70 Continuous Drain Current3, VGS @ 4.5V 4.3 A
IDM Pulsed Drain Current1,2 10 A
PD@TA=25 Total Power Dissipation 1.38 W
  Linear Derating Factor 0.01 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150



Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device AP2306N.

The SOT-23 package is universally used for all commercial-industrial applications.



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