MFG:APEC Package Cooled:SOT-23 D/C:08+
MFG: APEC
Package Cooled: SOT-23
D/C: 08+
Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resis...
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial applications.
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 60 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25 | Continuous Drain Current3, VGS @ 10V | 3 | A |
| ID@TC=100 | Continuous Drain Current3, VGS @ 10V | 2.3 | A |
| IDM | Pulsed Drain Current1,2 | 10 | A |
| PD@TC=25 | Total Power Dissipation | 1.38 | W/ |
| Linear Derating Factor | 0.01 | W | |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 |
AP2000A-00
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Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device AP2306N.The SOT-23 package is universally used for all commercial-industrial applications.
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