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AP6679P

Features: Lower On-resistance Simple Drive Requirement Fast Switching CharacteristicSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±25 V ID@TA=25 Continuous Drain Current, VGS @ 10V -75 A ID@TA=100 Continuous Drai...

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SeekIC No. : 004286361 Detail

AP6679P: Features: Lower On-resistance Simple Drive Requirement Fast Switching CharacteristicSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Vo...

AP6679P Data Sheet

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Part Number:
AP6679P
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Lower On-resistance
Simple Drive Requirement
Fast Switching Characteristic


Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±25 V
ID@TA=25 Continuous Drain Current, VGS @ 10V -75 A
ID@TA=100 Continuous Drain Current, VGS @ 10V -50 A
IDM Pulsed Drain Current1 300 A
PD@TA=25 Total Power Dissipation 89 W
  Linear Derating Factor 0.71 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150



Description

The Advanced Power MOSFETs AP6679P from APEC provide the designer with the best combination of fast switching,  uggedized device design, low on-resistance and cost-effectiveness.

The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679P) are available for low-profile applications.




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