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Part Number: AP6679GI

 

 

 

 

Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,...


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AP6679GI General Description


The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications.

AP6679GI Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V -48 A
ID@TC=100 Continuous Drain Current, VGS @ 10V -30 A
IDM Pulsed Drain Current1 300 A
PD@TC=25 Total Power Dissipation 31.3 W
  Linear Derating Factor 0.25 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

AP6679GI Features

Low Gate Charge
Single Drive Requirement
Lower On-resistance ID -48A
RoHS Compliant

AP6679GI datasheet

AP6679GI
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