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AP6679GI

Features: Low Gate Charge Single Drive Requirement Lower On-resistance ID -48A RoHS CompliantSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25 Continuous Drain Current, VGS @ 10V -48 A ID@TC=100 Conti...

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SeekIC No. : 004286360 Detail

AP6679GI: Features: Low Gate Charge Single Drive Requirement Lower On-resistance ID -48A RoHS CompliantSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate...

AP6679GI Data Sheet

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Part Number:
AP6679GI
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

Low Gate Charge
Single Drive Requirement
Lower On-resistance ID -48A
RoHS Compliant


Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V -48 A
ID@TC=100 Continuous Drain Current, VGS @ 10V -30 A
IDM Pulsed Drain Current1 300 A
PD@TC=25 Total Power Dissipation 31.3 W
  Linear Derating Factor 0.25 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150



Description

The Advanced Power MOSFETs AP6679GI from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications.




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