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Part Number: AP6924GEY

 

 

 

 

Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,...


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AP6924GEY General Description


The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

AP6924GEY Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage (MOSFET and Schottky)) 20 V
VKA Reverse Voltage (Schottky) 20 V
VGS Gate-Source Voltage (MOSFET) ±6 V
ID@TA=25 Continuous Drain Current3 (MOSFET) 1 A
ID@TA=70 Continuous Drain Current3 (MOSFET) 0.8 A
IDM Pulsed Drain Current1 (MOSFET) 8 A
IF Average Forward Current (Schottky) 0.5 A
IFM Pulsed Forward Current1 (Schottky) 2 A
PD@TA=25 Total Power Dissipation (MOSFET) 0.9 W
  Total Power Dissipation (Schottky) 0.9 W
TSTG Storage Temperature Range -55 to 125
TJ Operating Junction Temperature Range -55 to 125

AP6924GEY Features

Low On-Resistance
Fast Switching Characteristic
Included Schottky Diode

AP6924GEY datasheet

AP6924GEY
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