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AP6923O

Features: Low On-Resistance Fast Switching Characteristic Included Schottky DiodeSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage (MOSFET and Schottky)) -20 V VKA Reverse Voltage (Schottky) 20 V VGS Gate-Source Voltage (MOSFET) ±12 V ID@TA=25 C...

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SeekIC No. : 004286364 Detail

AP6923O: Features: Low On-Resistance Fast Switching Characteristic Included Schottky DiodeSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage (MOSFET and Schottky)) -20 V ...

AP6923O Data Sheet

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Part Number:
AP6923O
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low On-Resistance
Fast Switching Characteristic
Included Schottky Diode


Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage (MOSFET and Schottky)) -20 V
VKA Reverse Voltage (Schottky) 20 V
VGS Gate-Source Voltage (MOSFET) ±12 V
ID@TA=25 Continuous Drain Current3 (MOSFET) -3.5 A
ID@TA=100 Continuous Drain Current3 (MOSFET) -2.8 A
IDM Pulsed Drain Current1 (MOSFET) - 30 A
IF Average Forward Current (Schottky) 1 A
IFM Pulsed Forward Current1 (Schottky) 25 A
PD@TA=25 Total Power Dissipation (MOSFET) 1 W
  Total Power Dissipation (Schottky) 1 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 125



Description

The Advanced Power MOSFETs AP6923O from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.




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