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Part Number: AP6923O

 

 

 

 

Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,...


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AP6923O General Description


The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

AP6923O Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage (MOSFET and Schottky)) -20 V
VKA Reverse Voltage (Schottky) 20 V
VGS Gate-Source Voltage (MOSFET) ±12 V
ID@TA=25 Continuous Drain Current3 (MOSFET) -3.5 A
ID@TA=100 Continuous Drain Current3 (MOSFET) -2.8 A
IDM Pulsed Drain Current1 (MOSFET) - 30 A
IF Average Forward Current (Schottky) 1 A
IFM Pulsed Forward Current1 (Schottky) 25 A
PD@TA=25 Total Power Dissipation (MOSFET) 1 W
  Total Power Dissipation (Schottky) 1 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 125

AP6923O Features

Low On-Resistance
Fast Switching Characteristic
Included Schottky Diode

AP6923O datasheet

AP6923O
PDF/DataSheet Download

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