FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Drain to Source Voltage (Vdss): 1000V (1kV)
Series: POWER MOS 7®
Current - Continuous Drain (Id) @ 25° C: 37A
Vgs(th) (Max) @ Id: 5V @ 5mA
Power - Max: 694W
Rds On (Max) @ Id, Vgs: 210 mOhm @ 18.5A, 10V
Gate Charge (Qg) @ Vgs: 395nC @ 10V
Input Capacitance (Ciss) @ Vds: 9750pF @ 25V
Features: • Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular SOT-227 Package
Specifications
| Symbol |
Parameter |
APT10021JLL |
UNIT |
| VDSS |
Drain-Source Voltage |
1000 |
Volts |
| ID |
Continuous Drain Current @ Tc = 25 °C
|
37 |
Amps |
| IDM |
Pulsed Drain Current |
148 |
| VGS |
Gate-Source Voltage Continuous |
±30 |
Volts |
| VGSM |
Gate-Source Voltage Transient |
±40 |
| PD |
Total Power Dissipation @ TC = 25 |
690 |
Watts |
| Linear Derati |
5.52 |
W/°C |
| TJ,TSTG |
Operating and Storage Junction Temperature Range |
-55to 150 |
°C |
| TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
300 |
| IAR |
Avalanche Current (Repetitive and Non-Repetitive) |
37 |
Amps |
| EAR |
Repetitive Avalanche Energy |
50 |
mJ |
| EAS |
Single Pulse Avalanche Energy |
3600 |
Parameters: | Technical/Catalog Information | APT10021JLL |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 37A |
| Rds On (Max) @ Id, Vgs | 210 mOhm @ 18.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 9750pF @ 25V |
| Power - Max | 694W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 395nC @ 10V |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT10021JLL
APT10021JLL
|
APT10021JLL Data Sheet
